| PART |
Description |
Maker |
| TC524256BJ-10-EL |
CMOS 1M-Bit Multiport DRAM
|
ETC
|
| HM53461 HM53461P-10 HM53461P-12 HM53461P-15 HM5346 |
120ns; V(cc): -0.5 to 7.0V; 50mA; 1W; 65.536-word x 4-bit multiport CMOS video RAM
150ns; V(cc): -0.5 to 7.0V; 50mA; 1W; 65.536-word x 4-bit multiport CMOS video RAM
100ns; V(cc): -0.5 to 7.0V; 50mA; 1W; 65.536-word x 4-bit multiport CMOS video RAM
65,536-WORD x 4-BIT MULTIPORT CMOS VIDEO RAM
65536 word x 4 Bit Multiport CMOS Video RAM
|
Hitachi Semiconductor
Hitachi,Ltd.
|
| MSM548262-70JS MSM548262-70TS-K MSM548262-80JS OKI |
262,144-Word x 8-Bit Multiport DRAM
|
OKI SEMICONDUCTOR CO., LTD.
|
| MSM514262 MSM514262-80ZS MSM514262-10 MSM514262-10 |
262,144-Word x 4-Bit Multiport DRAM
|
OKI[OKI electronic componets]
|
| MSM518122 |
131,072-Word x 8-Bit Multiport DRAM
|
OKI[OKI electronic componets]
|
| MSM54C865-70 MSM54C865-80ZS MSM54C865-80JS MSM54C8 |
65,536-Word X 8-Bit Multiport DRAM 65,536字8位多端口内存
|
OKI SEMICONDUCTOR CO., LTD.
|
| MSM548263 |
262,144-Word x 8-Bit Multiport DRAM
From old datasheet system
|
OKI
|
| GM71C17403C-6 GM71C17403C-7 GM71C17403CL-7 GM71S17 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns
4,194,304 WORDS X 4 BIT CMOS DYNAMIC RAM
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns, low power
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 70ns, low power
|
Hynix Semiconductor
|
| TC528267 |
262144 Words x 8 Bits Multiport DRAM
|
Toshiba
|
| AS4C14400-70JC AS4C14405-60JC AS4C14405-50TC AS4C1 |
1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 70ns
1M-bit 4 CMOS DRAM EDO, single 5V power supply, 60ns
1M-bit 4 CMOS DRAM EDO, single 5V power supply, 50ns
1M-bit 4 CMOS DRAM EDO, single 5V power supply, 70ns
1M-bit 4 CMOS DRAM EDO, single 5V power supply, 40ns
1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 60ns
1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 50ns
1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 40ns
|
Alliance Semiconductor
|
